Datasheet SSF6N80A6 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SSF6N80A6	800V N-Channel MOSFET Main Product Characteristics VDSS 800V RDS(on) 2.2Ω (typ.) ID 5.5A TO-262 Features and Benefits  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse	GOOD-ARK

SSF6N8 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SSF6N80A6	800V N-Channel MOSFET Main Product Characteristics VDSS 800V RDS(on) 2.2Ω (typ.) ID 5.5A TO-262 Features and Benefits  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast s	GOOD-ARK
SSF6N80A	Advanced Power MOSFET w w a D . w S a t e e h U 4 t m o .c w w w .D t a S a e h U 4 t e m o .c w w w .D a t a e h S 4 t e U . m o c	Samsung Electronics
SSF6N80G	N-Channel MOSFET Main Product Characteristics: VDSS RDS(on) 800V 2.35Ω (typ.) ID 5.5A Features and Benefits: TO-251 (IPAK)  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge	SILIKRON

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Número de pieza	Descripción	Fabricantes	PDF
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