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Datasheet SI2301 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 9 | SI2301 | P-Channel Enhancement Mode MOSFET 20V P-Channel Enhancement Mode MOSFET
VDS= -20V RDS(ON), [email protected], [email protected] RDS(ON), [email protected], [email protected]
130mΩ 190mΩ
Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
SI2301
D
SOT-23(PACKAGE)
GS
REF.
A B C D E
F
Millime |
 JinYu |
 |
| 8 | SI2301 | P-Channel 20-V(D-S) MOSFET SHENZHEN YANGJING MICROELECTRONICS CO.,LTD
SOT-23 Plastic-Encapsulate MOSFETS
SI2301 P-Channel 20-V(D-S) MOSFET
FEATURE TrenchFET Power MOSFET
APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter
MARKING: A11
SHB
SOT-23
1. GATE 2. SOURCE 3. DRAIN
Maximum ratings (Ta=25℃ unless ot |
 YANGJING |
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| 7 | SI2301 | P-CHANNEL MOSFET SI2301
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions SOT-23 塑封封装 P 道 MOS 场效应管。P- CHANNEL MOSFET in a SOT-23 Plastic Package.
特征 / Features
沟道场效应管,MOS 场效应管。 Trench FET Power MOSFET 100% Rg Tested.
用途 / Applications 主要用于显示屏驱动� |
 BLUE ROCKET ELECTRONICS |
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| 6 | SI2301 | P-Channel Enhancement Mode Field Effect Transistor MCC
TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
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SI2301
Features
• • • • • • • •
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol VDS ID IDM VGS PD RθJA TJ TSTG Paramet |
 MCC |
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