Datasheet SDB10S120 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SDB10S120	Silicon Carbide Power Schottky Diode Silicon Carbide Power Schottky Diode Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current - Zero Forward Recovery Voltage Silicon Carbide SDB10S120 Product Summary	SemiSouth

SDB10S Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SDB10S120	Silicon Carbide Power Schottky Diode Silicon Carbide Power Schottky Diode Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current - Zero Forward Recovery Voltage Silicon Carbide SDB10S12	SemiSouth
SDB10S30	Silicon Carbide Schottky Diode Preliminary data SDP10S30, SDB10S30 SDT10S30 Silicon Carbide Schottky Diode Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery Product Summary V VRRM 300 Qc IF P-TO220-2-2. P-TO220-3.SMD 23 10 P-T	Infineon Technologies
SDB10S100D2	Schottky Barrier Rectifier ( Diode ) HIGH VOLTAGE SCHOTTKY RECTIFIER SDB10S100D2 Schottky Barrier Rectifier Features  Low forward voltage drop and leakage current  Low power loss and High efficiency 4  Guard-ring for overvoltage protection  High surge capability  Full lead (Pb)-free and RoHS com	AUK

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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