Datasheet SCS212AGHR Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SCS212AGHR	SiC Schottky Barrier Diode SCS212AGHR SiC Schottky Barrier Diode VR 650V IF 12A QC 18nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lConstruction Silicon carbide epitaxial planer Schottky diode lAEC-Q101 Qualified TO-220AC (1) Data Sheet lInner circuit (2) (3) (1	ROHM Semiconductor

SCS212A Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SCS212AJ	SiC Schottky Barrier Diode SCS212AJ SiC Schottky Barrier Diode VR 650V IF 12A QC 18nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lConstruction Silicon carbide epitaxial planer type lOutline LPT(L) Data Sheet (1) (2) (3) (4) lInner ci	ROHM Semiconductor
SCS212AGHR	SiC Schottky Barrier Diode SCS212AGHR SiC Schottky Barrier Diode VR 650V IF 12A QC 18nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lConstruction Silicon carbide epitaxial planer Schottky diode lAEC-Q101 Qualified TO-220AC (1) Data Sheet lInner	ROHM Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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