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Datasheet SBT5551 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | SBT5551 | NPN Silicon Transistor Semiconductor
SBT5551
NPN Silicon Transistor
Descriptions
• General purpose amplifier • High voltage application
Features
• high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE(sat)=0.5V(MAX.) • Complementary pair with SBT5401
Ordering In |
 AUK corp |
 |
| 1 | SBT5551F | NPN Silicon Transistor Semiconductor
SBT5551F
NPN Silicon Transistor
Descriptions
• General purpose amplifier • High voltage application
Features
• high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE(sat)=0.5V(MAX.) • Complementary pair with SBT5401F
Ordering |
AUK corp |
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