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Datasheet S9012LT1 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | S9012LT1 | PNP Epitaxial Silicon Transistor S9012LT1 PNP Epitaxial Silicon Transistor
1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION.
SOT-23
Collector-Emitter Voltage: VCEO= -25V Collector Dissipation: PC=300mW
Absolute Maximum Ratings (TA=25oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage Collector-Em |
 Elite |
 |
| 3 | S9012LT1 | PNP Transistor Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors
S9012LT1 TRANSISTOR (PNP)
FEATURES
SOT-23
1. BASE 2. EMITTER 3. COLLECTOR
1. 0
Power dissipation
PCM: 0.3 W (Tamb=25℃)
Collector current ICM: -0.5 A
Collector-base voltage V(BR)CBO: -40 V
Operating and st |
 Tuofeng Semiconductor |
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| 2 | S9012LT1 | PNP General Purpose Transistors PNP General Purpose Transistors
P b Lead(Pb)-Free
V CEO
S9012LT1
Value
-25
-40 -5 -500
3
1 2
SOT-23
S9012LT1=2T1
-0.1 -100 -100 E=-20Vdc,IE= 0 ) -40 -5.0
300
2.4 417
-25 -40 -5.0 O -0.1
-0.1 -0.1
u u u
WEITRON
http://www.weitron.com.tw
S9012LT1
ELECTRICAL CHARACTERISTICS (TA=25 C unless ot |
 Weitron Technology |
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| 1 | S9012LT1 | SOT-23 Plastic-Encapsulate Transistors |
 ETC |
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