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Datasheet RJP60V0DPM Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | RJP60V0DPM | N-Channel IGBT Preliminary Datasheet
RJP60V0DPM
600V - 22A - IGBT Application: Inverter
Features
High breakdown-voltage Low Collector to Emitter saturation Voltage VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) Short circuit withstand time (6 s typ.) Trench gate and thin wafer tec |
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| 1 | RJP60V0DPM-80 | IGBT RJP60V0DPM-80
600V - 22A - IGBT Application: Inverter
Features
• High breakdown-voltage • Low collector to emitter saturation voltage
VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Short circuit withstand time (6 μs typ.) • Trench gate and thin wafer technology (G6H series)
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