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Datasheet RJP60F0DPE Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | RJP60F0DPE | N-Channel IGBT Preliminary Datasheet
RJP60F0DPE
600 V - 25 A - IGBT High Speed Power Switching
Features
Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C) Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at IC = 30 A, VCE |
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RJP60F0 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
RJP60F0DPM | N-Channel IGBT |
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RJP60F0DPE | N-Channel IGBT |
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Número de pieza | Descripción | Fabricantes | |
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