|
|
Datasheet RJP60D0DPP-M0 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | RJP60D0DPP-M0 | Silicon N Channel IGBT Preliminary Datasheet
RJP60D0DPP-M0
Silicon N Channel IGBT High Speed Power Switching
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C) Gate to emitter voltage rating 30 V Pb-f |
Renesas Technology |
RJP60D0DPP Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
RJP60D0DPP-M0 | Silicon N Channel IGBT |
Renesas Technology |
Esta página es del resultado de búsqueda del RJP60D0DPP-M0. Si pulsa el resultado de búsqueda de RJP60D0DPP-M0 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |