Datasheet RJP30K3DPP-M0 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RJP30K3DPP-M0	N-Channel Power MOSFET / Transistor Preliminary Datasheet RJP30K3DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features      Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.1V typ High speed switching tr = 90 ns typ, tf = 250 ns typ Low leak curr	Renesas

RJP30K3DPP Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RJP30K3DPP-M0	N-Channel Power MOSFET / Transistor Preliminary Datasheet RJP30K3DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features      Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.1V typ High speed switching tr = 90 ns typ, tf = 250	Renesas

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