Datasheet RJP30H1DPD Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RJP30H1DPD	N-Channel Power MOSFET / Transistor Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching Features     Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak curre	Renesas

RJP30H1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RJP30H1DPD	N-Channel Power MOSFET / Transistor Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching Features     Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V	Renesas
RJP30H1DPP-M0	N-Channel Power MOSFET / Transistor Preliminary Datasheet RJP30H1DPP-M0 Silicon N Channel IGBT High speed power switching Features      Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)=	Renesas

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Número de pieza	Descripción	Fabricantes	PDF
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