Datasheet RJK60S3DPD Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RJK60S3DPD	High Speed Power Switching MOS FET RJK60S3DPD 600V - 12A - SJ MOS FET High Speed Power Switching Preliminary Datasheet R07DS0731EJ0300 Rev.3.00 Oct 12, 2012 Features  Superjunction MOSFET  Low on-resistance RDS(on) = 0.35  typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)  High speed switching tf = 21 ns typ. (at ID = 6 A, VG	Renesas

RJK60S3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RJK60S3DPD	High Speed Power Switching MOS FET RJK60S3DPD 600V - 12A - SJ MOS FET High Speed Power Switching Preliminary Datasheet R07DS0731EJ0300 Rev.3.00 Oct 12, 2012 Features  Superjunction MOSFET  Low on-resistance RDS(on) = 0.35  typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)  High speed switching tf = 21 ns t	Renesas
RJK60S3DPE	High Speed Power Switching SJ MOS FET Preliminary Datasheet RJK60S3DPE 600V - 12A - SJ MOS FET High Speed Power Switching R07DS0732EJ0200 Rev.2.00 Oct 12, 2012 Features  Superjunction MOSFET  Low on-resistance RDS(on) = 0.35  typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)  High speed switching tf = 21 ns	Renesas
RJK60S3DPP-E0	600V - 12A - SJ MOS FET High Speed Power Switching Preliminary Datasheet RJK60S3DPP-E0 600V - 12A - SJ MOS FET High Speed Power Switching R07DS0637EJ0300 Rev.3.00 Oct 12, 2012 Features  Superjunction MOSFET  Low on-resistance RDS(on) = 0.35  typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)  High speed switching tf = 21	Renesas

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Número de pieza	Descripción	Fabricantes	PDF
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