Datasheet RJK5030DPD Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RJK5030DPD	Silicon N Channel MOS FET High Speed Power Switching Preliminary Datasheet RJK5030DPD Silicon N Channel MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 1.3  typ. (at ID = 2 A, VGS = 10 V, Ta = 25C)  High speed switching REJ03G1913-0100 Rev.1.00 Apr 12, 2010 Outline RENESAS Package code:	Renesas Technology

RJK5030 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RJK5030DPD	Silicon N Channel MOS FET High Speed Power Switching Preliminary Datasheet RJK5030DPD Silicon N Channel MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 1.3  typ. (at ID = 2 A, VGS = 10 V, Ta = 25C)  High speed switching REJ03G1913-0100 Rev.1.00 Apr 12, 2010 Outline RE	Renesas Technology
RJK5030DPP-M0	High Speed Power Switching Preliminary Datasheet RJK5030DPP-M0 Silicon N Channel MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 1.3  typ. (at ID = 2 A, VGS = 10 V, Ta = 25C)  High speed switching R07DS0227EJ0100 Rev.1.00 Dec 14, 2010 Outline RENESAS Package cod	Renesas

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