Datasheet RJK03N8DNS Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RJK03N8DNS	Silicon N Channel Power MOS FET Preliminary Datasheet RJK03N8DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching R07DS0789EJ0100 Rev.1.00 Feb 29, 2012 Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 4	Renesas Technology

RJK03N8 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RJK03N8DNS	Silicon N Channel Power MOS FET Preliminary Datasheet RJK03N8DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching R07DS0789EJ0100 Rev.1.00 Feb 29, 2012 Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-re	Renesas Technology

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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