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Datasheet RJK03B7DPA Equivalent ( PDF )

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1 RJK03B7DPA   Silicon N Channel Power MOS FET Power Switching

Preliminary Datasheet RJK03B7DPA Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.0 m typ. (at VGS = 10 V)  Pb-free  Halogen-free      REJ03G1789-02
Renesas Technology
Renesas Technology
datasheet RJK03B7DPA pdf

RJK03B7 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
RJK03B7DPA

Silicon N Channel Power MOS FET Power Switching

Preliminary Datasheet RJK03B7DPA Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.0 m typ. (at VGS = 10 V)  Pb-free  Halogen-free   
Renesas Technology
Renesas Technology
datasheet pdf - Renesas Technology


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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