Datasheet RJK0330DPB-01 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RJK0330DPB-01	Silicon N-Channel MOS FET RJK0330DPB-01 Silicon N Channel Power MOS FET Power Switching Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 2.1 m typ. (at VGS = 10 V)  Pb-free  Halogen-free Outline RENESAS Package code: PTZ	Renesas

RJK0330DPB Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RJK0330DPB	Silicon N Channel Power MOS FET Power Switching RJK0330DPB Silicon N Channel Power MOS FET Power Switching REJ03G1639-0400 Rev.4.00 Apr 10, 2008 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.1 mΩ typ. (at VGS = 10 V) • P	Renesas Technology
RJK0330DPB-01	Silicon N-Channel MOS FET RJK0330DPB-01 Silicon N Channel Power MOS FET Power Switching Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 2.1 m typ. (at VGS = 10 V)  Pb-free  Halogen-free Outline RENES	Renesas

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Número de pieza	Descripción	Fabricantes	PDF
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