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Datasheet RJK0328DPB Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | RJK0328DPB | Silicon N Channel Power MOS FET Power Switching
RJK0328DPB
Silicon N Channel Power MOS FET Power Switching
REJ03G1637-0400 Rev.4.00 Apr 10, 2008
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.6 mΩ typ. (at VGS = 10 V) • Pb-free • • • |
 Renesas Technology |
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| 1 | RJK0328DPB-01 | Silicon N-Channel MOS FET RJK0328DPB-01
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance
RDS(on) = 1.6 m typ. (at VGS = 10 V) Pb-free Halogen-free
Outline
RENESAS Package code: PTZ |
 Renesas |
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