Datasheet RJH60F6DPK Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RJH60F6DPK	Silicon N Channel IGBT High Speed Power Switching Preliminary Datasheet RJH60F6DPK Silicon N Channel IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High	Renesas Technology

RJH60F6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RJH60F6DPK	Silicon N Channel IGBT High Speed Power Switching Preliminary Datasheet RJH60F6DPK Silicon N Channel IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer	Renesas Technology
RJH60F6DPQ-A0	High Speed Power Switching Preliminary Datasheet RJH60F6DPQ-A0 600 V - 45 A - IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafe	Renesas
RJH60F6BDPQ-A0	High Speed Power Switching Preliminary Datasheet RJH60F6BDPQ-A0 600V - 45A - IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer	Renesas

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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