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Datasheet RJH1BF6RDPQ-80 Equivalent ( PDF )

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1 RJH1BF6RDPQ-80   High Speed Power Switching

Preliminary Datasheet RJH1BF6RDPQ-80 Silicon N Channel IGBT High Speed Power Switching Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.7 V
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datasheet RJH1BF6RDPQ-80 pdf

RJH1BF6RDPQ Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
RJH1BF6RDPQ-80

High Speed Power Switching

Preliminary Datasheet RJH1BF6RDPQ-80 Silicon N Channel IGBT High Speed Power Switching Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation volta
Renesas
Renesas
datasheet pdf - Renesas


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Número de pieza Descripción Fabricantes PDF
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