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Datasheet RFP12N06 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | RFP12N06 | 17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE
Data Sheet January 2002
17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging
JEDEC TO-251AA
DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE
Features
JEDEC TO-252AA
DRAIN (FLANGE)
• Ultra Low On-Resistance - rDS(ON) = 0.063Ω, VGS = 10 |
 Fairchild Semiconductor |
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| 2 | RFP12N06RLE | 17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE
Data Sheet January 2002
17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging
JEDEC TO-251AA
DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE
Features
JEDEC TO-252AA
DRAIN (FLANGE)
• Ultra Low On-Resistance - rDS(ON) = 0.063Ω, VGS = 10 |
Fairchild Semiconductor |
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| 1 | RFP12N06RLE | 12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE
Data Sheet July 1999 File Number 2407.4
12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs
These N-Channel logic level ESD protected power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of |
 Intersil Corporation |
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