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Datasheet RFD4N06L Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | RFD4N06L | 4A/ 60V/ 0.600 Ohm/ Logic Level/ N-Channel Power MOSFETs RFD4N06L, RFD4N06LSM
Data Sheet June 1999 File Number
2837.1
4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs
The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5 volt) driving sources in applic |
 Fairchild Semiconductor |
 |
| 3 | RFD4N06L | 4A/ 60V/ 0.600 Ohm/ Logic Level/ N-Channel Power MOSFETs RFD4N06L, RFD4N06LSM
Data Sheet June 1999 File Number
2837.1
4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs
The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5 volt) driving sources in applic |
 Intersil Corporation |
|
| 2 | RFD4N06LSM | 4A/ 60V/ 0.600 Ohm/ Logic Level/ N-Channel Power MOSFETs RFD4N06L, RFD4N06LSM
Data Sheet June 1999 File Number
2837.1
4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs
The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5 volt) driving sources in applic |
Fairchild Semiconductor |
|
| 1 | RFD4N06LSM | 4A/ 60V/ 0.600 Ohm/ Logic Level/ N-Channel Power MOSFETs RFD4N06L, RFD4N06LSM
Data Sheet June 1999 File Number
2837.1
4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs
The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5 volt) driving sources in applic |
Intersil Corporation |
|
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