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Datasheet RFD3055 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
9 | RFD3055 | 12A/ 60V/ 0.150 Ohm/ N-Channel Power MOSFETs RFD3055, RFD3055SM, RFP3055
Data Sheet July 1999 File Number
3648.2
12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of ene |
Intersil Corporation |
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8 | RFD3055 | 11A/ 60V/ 0.107 Ohm/ Logic Level/ N-Channel Power MOSFETs RFD3055LE, RFD3055LESM, RFP3055LE
Data Sheet January 2002
11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs
These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circ |
Fairchild Semiconductor |
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7 | RFD3055 | 12A/ 60V/ 0.150 Ohm/ N-Channel Power MOSFETs RFD3055LE, RFD3055LESM, RFP3055LE
Data Sheet January 2002
11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs
These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circ |
Fairchild Semiconductor |
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6 | RFD3055LE | 11A/ 60V/ 0.107 Ohm/ Logic Level/ N-Channel Power MOSFETs RFD3055LE, RFD3055LESM, RFP3055LE
Data Sheet January 2002
11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs
These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circ |
Fairchild Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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