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Datasheet RFD16N03 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
5 RFD16N03   16A/ 30V/ 0.025 Ohm/ Logic Level/ N-Channel Power MOSFETs

RFD16N03L, RFD16N03LSM Data Sheet April 1999 File Number 4013.2 16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of
Intersil Corporation
Intersil Corporation
datasheet RFD16N03 pdf
4 RFD16N03L   Enhancement-Mode Power MOSFET

SEMICONDUCTOR RFD16N03L, RFD16N03LSM December 1995 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs Features Packaging • 16A, 30V • rDS(ON) = 0.022Ω • Temperature Compensating PSPICE Model • Can be Driven Directly from CMOS, NMOS, and TTL Circuits DRAIN
Harris
Harris
datasheet RFD16N03L pdf
3 RFD16N03L   16A/ 30V/ 0.025 Ohm/ Logic Level/ N-Channel Power MOSFETs

RFD16N03L, RFD16N03LSM Data Sheet April 1999 File Number 4013.2 16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of
Intersil Corporation
Intersil Corporation
datasheet RFD16N03L pdf
2 RFD16N03LSM   Enhancement-Mode Power MOSFET

SEMICONDUCTOR RFD16N03L, RFD16N03LSM December 1995 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs Features Packaging • 16A, 30V • rDS(ON) = 0.022Ω • Temperature Compensating PSPICE Model • Can be Driven Directly from CMOS, NMOS, and TTL Circuits DRAIN
Harris
Harris
datasheet RFD16N03LSM pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

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Sanken
Sanken
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