Datasheet RF1S640SM Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RF1S640SM	18A/ 200V/ 0.180 Ohm/ N-Channel Power MOSFETs IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo	Fairchild Semiconductor

RF1S64 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RF1S640	18A/ 200V/ 0.180 Ohm/ N-Channel Power MOSFETs IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of e	Fairchild Semiconductor
RF1S640SM	18A/ 200V/ 0.180 Ohm/ N-Channel Power MOSFETs IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of e	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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