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Datasheet RF1S30N06LE Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | RF1S30N06LE | 30A/ 60V/ ESD Rated/ Avalanche Rated/ Logic Level N-Channel Enhancement-Mode Power MOSFETs S E M I C O N D U C T O R
RFP30N06LE, RF1S30N06LE, RF1S30N06LESM
30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
Packages
JEDEC TO-220AB
SOURCE DRAIN GATE
July 1995
Features
• 30A, 60V • rDS(ON) = 0.047Ω • 2kV ESD Protected • Temperature Compen |
 Fairchild Semiconductor |
 |
| 4 | RF1S30N06LE | N-Channel Enhancement-Mode Power MOSFETs RFP30N06LE, RF1S30N06LE,
SEMICONDUCTOR
RF1S30N06LESM
July 1995
30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
Features
• 30A, 60V
• rDS(ON) = 0.047Ω • 2kV ESD Protected
• Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width |
 Harris |
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| 3 | RF1S30N06LESM | 30A 60V ESD Rated/ Avalanche Rated / Logic Level N-Channel Enhancement-Mode Power MOSFETs S E M I C O N D U C T O R
RFP30N06LE, RF1S30N06LE, RF1S30N06LESM
30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
Packages
JEDEC TO-220AB
SOURCE DRAIN GATE
July 1995
Features
• 30A, 60V • rDS(ON) = 0.047Ω • 2kV ESD Protected • Temperature Compen |
Fairchild Semiconductor |
|
| 2 | RF1S30N06LESM | 30A/ 60V/ ESD Rated/ 0.047 Ohm/ Logic Level N-Channel Power MOSFETs RFP30N06LE, RF1S30N06LESM
Data Sheet April 1999 File Number
3629.2
30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs
These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives |
 Intersil Corporation |
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