Datasheet RD12MVS1 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RD12MVS1	Silicon MOSFET Power Transistor MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVS1 0.2+/-0.05 (0.22) RoHS Compliance, DESCRIPTION RD12MVS1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. Silicon MOSFET Power Transisto	Mitsubishi Electric

RD12M Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RD12M	ZENER DIODES 200 mW 3-PIN MINI MOLD DATA SHEET ZENER DIODES RD2.0M to RD47M ZENER DIODES 200 mW 3-PIN MINI MOLD DESCRIPTION Type RD2.0M to RD47M Series are planar type zener diodes processing an allowable power dissipation of 200 mW. 0.4 +0.1 –0.05 PACKAGE DIMENSIONS (Unit: mm) 2.8 ± 0.2 1.5 0.65 +0.1 –0.1	NEC
RD12MVP1	Silicon MOSFET Power Transistor MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVP1 (a) 0.2+/-0.05 0.65+/-0.2 (c) (b) (b) 7.0+/-0.2 8.0+/-0.2 6.2+/-0.2 5.6+/-0.2 (d) 4.2+/-0.2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W DESCRI	Mitsubishi Electric
RD12MW	ZENER DIODES 200 mW 3-PIN MINI MOLD DATA SHEET ZENER DIODES RD2.0MW to RD39MW ZENER DIODES 200 mW 3-PIN MINI MOLD DESCRIPTION Type RD2.0MW to RD39MW Series are 3-PIN Mini Mold Package zener diodes possessing allowable power dissipation of 200 mW. 0.4 –0.05 PACKAGE DIMENSIONS (Unit: mm) 2.8 ± 0.2 +0.1 FEATUR	NEC

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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