Datasheet RD07MVS2 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RD07MVS2	Silicon MOSFET Power Transistor MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 0.2+/-0.05 (0.22) (0.22) (0.25) RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION OUTLINE DRAWING RD07MVS2 is a MOS FET type transistor specifically de	Mitsubishi Electric Semiconductor

RD07M Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RD07MUS2B	RF POWER MOS FET Silicon MOSFET Power Transistor < Silicon RF Power MOS FET (Discrete) > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING 6.0+/-0.15 0.2+/-0.05 (0.22) DESCRIPTION RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifier	Mitsubishi Electric Semiconductor
RD07MVS1	Silicon MOSFET Power Transistor MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS1 0.2+/-0.05 (0.22) Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION RD07MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applicatio	Mitsubishi Electric
RD07MVS1B	Silicon MOSFET Power Transistor < Silicon RF Power MOS FET (Discrete) > RD07MVS1B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION RD07MVS1B is a MOS FET type transistor specifically designed for VHF/UHF RF power 4.9+/-0.15 1.0+/-0.05 6.0+/-0.15 0.2+/-0.05 ampli	Mitsubishi Electric Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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