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Datasheet PJSOT24 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | PJSOT24 | STANDARD CAPACITANCE TVS ARRAY PJSOT03~PJSOT36
STANDARD CAPACITANCE TVS ARRAY VOLTAGE 3 ~ 36 Volt POWER 500 Watt
FEATURES
• 500 Watts Peak Pulse Power per Line ( tp=8/20 μs) • Low Clamping Voltage • Available for working Voltage Ranging from 3V and 36V • Lead free in compliance with EU RoHS 2011/65/EU directive • Gre |  Pan Jit International | data |
| 2 | PJSOT24C-03 | STANDARD CAPACITANCE TVS ARRAY PJSOT05C-03/PJSOT24C-03
STANDARD CAPACITANCE TVS ARRAY VOLTAGE 5 / 24 Volts POWER 250 Watts
FEATURES
• 250 Watts Peak Pulse Power per Line ( tp=8/20 ms) • Low Clampoing Voltage • Available in Multiple Voltage Types Ranging from 5V • IEC 61000-4-2 +15kV air, +8kV Contact • Lead free in comp | Pan Jit International | data |
PJS Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PJS6400 | N-Channel Enhancement Mode MOSFET PPJS6400
30V N-Channel Enhancement Mode MOSFET
Voltage
30 V
Current
6.4A
Features
RDS(ON) , VGS@10V, ID@6.4A<37mΩ RDS(ON) , VGS@4.5V, ID@4.5A<43mΩ RDS(ON) , VGS@2.5V, ID@2.9A<59mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, Pan Jit International mosfet | | |
| 2 | PJS6401 | P-Channel Enhancement Mode MOSFET PPJS6401
30V P-Channel Enhancement Mode MOSFET
Voltage
-30 V Current
-4.6A
Features
RDS(ON) , VGS@-10V, ID@-4.6A<71mΩ RDS(ON) , VGS@-4.5V, ID@-3.3A<81mΩ RDS(ON) , VGS@-2.5V, ID@-1.8A<110mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Appl Pan Jit International mosfet | | |
| 3 | PJS6404 | N-Channel Enhancement Mode MOSFET PPJS6404
30V N-Channel Enhancement Mode MOSFET
Voltage
30 V Current
6.8A
Features
RDS(ON) , VGS@10V, ID@6.8A<32mΩ RDS(ON) , VGS@4.5V,ID@4.3A<47mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc.. Lead free in compliance with EU Pan Jit International mosfet | | |
| 4 | PJS6405 | P-Channel Enhancement Mode MOSFET PPJS6405
30V P-Channel Enhancement Mode MOSFET
Voltage
-30 V Current
-4.6A
Features
RDS(ON) , VGS@-10V, ID@-4.6A<72mΩ RDS(ON) , VGS@-4.5V, ID@-3.0A<96mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc Lead free in compliance w Pan Jit International mosfet | | |
| 5 | PJS6414 | 20V N-Channel Enhancement Mode MOSFET PPJS6414
20V N-Channel Enhancement Mode MOSFET
Voltage
20 V
Current
6.6A
Features
RDS(ON) , VGS@4.5V, ID@6.6A<36mΩ RDS(ON) , VGS@2.5V, ID@4.1A<52mΩ RDS(ON) , VGS@1.8V, ID@1.9A<92mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application Pan Jit International mosfet | | |
| 6 | PJS6415AE | P-Channel Enhancement Mode MOSFET PPJS6415AE
20V P-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
-20 V Current
-4.9A
SOT-23 6L-1
Features
RDS(ON) , VGS@-10V, ID@-4.9A<60mΩ RDS(ON) , VGS@-4.5V, ID@-4.2A<70mΩ RDS(ON) , VGS@-2.5V, ID@-3.1A<96mΩ Advanced Trench Process Technology Specially De Pan Jit International mosfet | | |
| 7 | PJS6416 | 20V N-Channel Enhancement Mode MOSFET PPJS6416
20V N-Channel Enhancement Mode MOSFET
Voltage
20 V
Current
7.4A
Features
RDS(ON) , VGS@4.5V, ID@7.4A<27mΩ RDS(ON) , VGS@2.5V, ID@4.7A<41mΩ RDS(ON) , VGS@1.8V, ID@1.8A<85mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application Pan Jit International mosfet | |
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