Datasheet PE606DT Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PE606DT	Dual N-Channel Enhancement Mode MOSFET PE606DT Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS Q2 30V RDS(ON) 11mΩ @VGS = 10V Q1 30V 16mΩ @VGS = 10V ID 30A 23A PDFN 3X3S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Drain-Source Voltage VDS 30 Gate-Sourc	UNIKC

PE60 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PE600BA	N-Channel Enhancement Mode MOSFET PE600BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9.8mΩ @VGS = 10V ID 32A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage V	UNIKC
PE606BA	N-Channel Enhancement Mode MOSFET PE606BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 20mΩ @VGS = 10V ID3 22A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage V	UNIKC
PE60Q04N	SBD	Nihon Inter Electronics

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Número de pieza	Descripción	Fabricantes	PDF
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