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Datasheet PE552BA Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 PE552BA   N-Channel Enhancement Mode MOSFET

PE552BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 5mΩ @VGS = 4.5V ID3 47A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Tc = 25 °C
UNIKC
UNIKC		 datasheet PE552BA pdf

PE55 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
PE551BA

P-Channel Enhancement Mode MOSFET

PE551BA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 20mΩ @VGS = -10V ID -22A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage Gate-Source Volt
 UNIKC
UNIKC		 datasheet pdf - UNIKC
PE55HB

THYRISTOR MODULE

THYRISTOR MODULE PK(PD,PE,KK)55HB UL;E76102 M Power Thyristor/Diode Module PK55HB series are designed for various rectifier circuits and power controls. For your circuit application. following internal connections and wide voltage ratings up to 1,600V are av
 SanRex Corporation
SanRex Corporation		 datasheet pdf - SanRex Corporation
PE552BA

N-Channel Enhancement Mode MOSFET

PE552BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 5mΩ @VGS = 4.5V ID3 47A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage V
 UNIKC
UNIKC		 datasheet pdf - UNIKC


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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