|
|
Datasheet PD1503YVS Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | PD1503YVS | Dual N-Channel Enhancement Mode MOSFET PD1503YVS
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
Q2 30V 15.8mΩ @VGS = 10V
Q1 30V 21.0mΩ @VGS = 10V
ID 9A 8A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Q2
Q1
Drain-Source Voltage
VDS 30 30
G |
UNIKC |
|
2 | PD1503YVS | Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM
Dual N-Channel Enhancement Mode Field Effect Transistor
PD1503YVS
SOP-8 Halogen-Free & Lead-Free
PRODUCT SUMMARY V(BR)DSS Q2 Q1 30V 30V RDS(ON) 15.8mΩ 21mΩ ID 9A 8A
1 2 3 4
Q2 Q1
8 7 6 5
G : GATE D : DRAIN S : SOURCE
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted) P |
Niko-Sem |
|
1 | PD1503YVS-A | Dual N-Channel Enhancement Mode MOSFET PD1503YVS-A
Dual N- Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
Q2 30V 15.5mΩ @VGS = 10V
Q1 30V 18mΩ @VGS = 10V
ID 9A 8A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Q2 Q1
Drain-Source Voltage
Gate-Source Vo |
UNIKC |
Esta página es del resultado de búsqueda del PD1503YVS. Si pulsa el resultado de búsqueda de PD1503YVS se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |