Datasheet PBRN123E Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PBRN123E	NPN 800 mA 40 V BISS RETs PBRN123E series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 01 — 27 February 2007 Product data sheet 1. Product proﬁle 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small pla	NXP Semiconductors

PBRN1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PBRN113E	NPN 800 mA 40 V BISS RETs PBRN113E series NPN 800 mA, 40 V BISS RETs; R1 = 1 kΩ, R2 = 1 kΩ Rev. 01 — 1 March 2007 Product data sheet 1. Product proﬁle 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family	NXP Semiconductors
PBRN123E	NPN 800 mA 40 V BISS RETs PBRN123E series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 01 — 27 February 2007 Product data sheet 1. Product proﬁle 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET)	NXP Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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