Datasheet PB6C4JY Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PB6C4JY	Dual N-Channel Enhancement Mode MOSFET PB6C4JY Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 19.5mΩ @VGS = 4.5V ID 7.6A PDFN 2X5 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Dra	UNIKC

PB6C Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PB6C4JU	Dual N-Channel Enhancement Mode MOSFET PB6C4JU Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 19.5mΩ @VGS = 4.5V ID 7A TDFN 2X3-6 1,2:S1 3:G1 4:G2 5,6:S2 7:D1/D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source	UNIKC
PB6C4JY	Dual N-Channel Enhancement Mode MOSFET PB6C4JY Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 19.5mΩ @VGS = 4.5V ID 7.6A PDFN 2X5 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±8 Continuous Drai	UNIKC

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Número de pieza	Descripción	Fabricantes	PDF
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