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Datasheet P8010BIS Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | P8010BIS | N-Channel Enhancement Mode MOSFET P8010BIS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
85mΩ @VGS = 10V
ID 15A
TO-251(IS)
1.GATE 2.DRAIN 3.SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source V |
UNIKC |
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1 | P8010BIS | N-Channel Field Effect Transistor NIKO-SEM
N-Channel Enhancement Mode Field Effect Transistor
P8010BIS
TO-251(IS)
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
85mΩ
ID 15A
D
G S
123
1. GATE 2. DRAIN 3. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYM |
NIKO-SEM |
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Número de pieza | Descripción | Fabricantes | |
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