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Datasheet P75N06 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | P75N06 | PJP75N06 PJP75N06
60V N-Channel Enhancement Mode MOSFET
FEATURES • RDS(ON), VGS@10V,IDS@30A=13mΩ • RDS(ON), [email protected],IDS@30A=18mΩ
• Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Converters and Power Motor Controls • Fully Ch |
 Pan Jit International |
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| 1 | P75N06 | CEP75N06 CEP75N06/CEB75N06
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 87A, RDS(ON) = 12mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
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CEB SERIES TO-263 |
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