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Datasheet P6N70A Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 P6N70A   SSP6N70A

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ.) 1 2 3 SSP6N70A BVDSS = 700 V RDS(on) = 1.8 Ω ID = 6 A
 Fairchild Semiconductor
Fairchild Semiconductor		 datasheet P6N70A pdf

P6N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
P6NK60ZFP

STP6NK60ZFP

STB6NK60Z - STB6NK60Z-1 STP6NK60ZFP - STP6NK60Z N-channel 600 V - 1 Ω - 6 A - TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH™ Power MOSFET Features Type STB6NK60Z STB6NK60Z-1 STP6NK60ZFP STP6NK60Z ■ ■ ■ VDSS 600 V 600 V 600 V 600 V RDS(on) < 1.2 Ω < 1.2 Ω <
 STMicroelectronics
STMicroelectronics		 datasheet pdf - STMicroelectronics
P6NK90ZFP

STP6NK90ZFP

STP6NK90Z - STP6NK90ZFP STB6NK90Z N-CHANNEL 900V - 1.75Ω - 5.8A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH™Power MOSFET TYPE STP6NK90Z STP6NK90ZFP STB6NK90Z s s s s s s VDSS 900 V 900 V 900 V RDS(on) <2Ω <2Ω <2Ω ID 5.8 A 5.8 A 5.8 A Pw 140 W 30 W 140 W 3 1 2 T
 STMicroelectronics
STMicroelectronics		 datasheet pdf - STMicroelectronics
P6NA60FI

STP6NA60FI

STP6NA60 STP6NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP6NA60 STP6NA60FI s s s s s s s V DSS 600 V 600 V R DS( on) < 1.2 Ω < 1.2 Ω ID 6.5 A 3.9 A TYPICAL RDS(on) = 1 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TE
 ST Microelectronics
ST Microelectronics		 datasheet pdf - ST Microelectronics


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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