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Datasheet P6006BI Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | P6006BI | N-Channel Field Effect Transistor NIKO-SEM
N-Channel Enhancement Mode
P6006BI
Field Effect Transistor
TO-251
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 65mΩ
ID 18A
D G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage Gate-Source |
NIKO-SEM |
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1 | P6006BI | N-Channel Enhancement Mode MOSFET P6006BI
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 65mΩ @VGS = 10V
ID 18A
TO-251
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drai |
UNIKC |
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Número de pieza | Descripción | Fabricantes | |
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