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Datasheet P4N60 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | P4N60 | SSP4N60
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.)
SSP4N60AS
BVDSS = 600 V RDS(on) |
![]() Fairchild Semiconductor |
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P4 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
P4NK60ZFP | STP4NK60ZFP |
![]() ST Microelectronics |
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P45N02LDG | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
![]() Niko-Sem |
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P4NC60FP | STP4NC60FP |
![]() ST Microelectronics |
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Esta página es del resultado de búsqueda del P4N60. Si pulsa el resultado de búsqueda de P4N60 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
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![]() Sanken |
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