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Datasheet P4N60 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 P4N60   SSP4N60

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.) SSP4N60AS BVDSS = 600 V RDS(on)
 Fairchild Semiconductor
Fairchild Semiconductor		 datasheet P4N60 pdf

P4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
P4NK60ZFP

STP4NK60ZFP

STP4NK60Z, STP4NK60ZFP N-channel 600 V, 1.7 Ω typ., 4 A Zener-protected SuperMESH™ Power MOSFETs in TO-220 and TO-220FP packages Datasheet - production data Features TAB 3 2 1 TO-220 3 2 1 TO-220FP Order codes VDS RDS(on) max. PTOT STP4NK60Z 600 V 2 Ω 70 W STP4NK60ZFP
ST Microelectronics
ST Microelectronics		 datasheet pdf - ST Microelectronics
P45N02LDG

N-Channel Logic Level Enhancement Mode Field Effect Transistor

NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P45N02LDG TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 20m£[ ID 45A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIO
 Niko-Sem
Niko-Sem		 datasheet pdf - Niko-Sem
P4NC60FP

STP4NC60FP

STP4NC60 - STP4NC60FP STB4NC60-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET TYPE STP4NC60 STP4NC60FP STB4NC60-1 s s s s s VDSS 600V 600V 600V RDS(on) < 2.2Ω < 2.2Ω < 2.2Ω ID 4.2A 4.2A 4.2A 3 1 2 TYPICAL RDS(on) = 1.8
 ST Microelectronics
ST Microelectronics		 datasheet pdf - ST Microelectronics


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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