Datasheet P2NA60 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	P2NA60	PJP2NA60 PPJU2NA60 / PJP2NA60 / PJF2NA60 / PJD2NA60 600V N-Channel MOSFET Voltage Features  RDS(ON), VGS@10V,ID@1A<4.4Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green	Pan Jit

P2N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
P2NC60FP	STP2NC60FP N-CHANNEL 600V - 7Ω - 1.9A - TO-220/TO-220FP PowerMesh™II MOSFET TYPE STP2NC60 STP2NC60FP s s s s s STP2NC60 STP2NC60FP VDSS 600 V 600 V RDS(on) <8Ω <8Ω ID 1.9 A 1.9 A TYPICAL RDS(on) = 7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED	ST Microelectronics
P2NA60	PJP2NA60 PPJU2NA60 / PJP2NA60 / PJF2NA60 / PJD2NA60 600V N-Channel MOSFET Voltage Features  RDS(ON), VGS@10V,ID@1A<4.4Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU	Pan Jit
P2N60	STP2N60 STP2N60 STP2N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP2N60 STP2N60FI s s s s s V DSS 600 V 600 V R DS( on) < 3.5 Ω < 3.5 Ω ID 2.9 A 2.2 A TYPICAL RDS(on) = 3.2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVAL	STMicroelectronics

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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