Datasheet P2812A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	P2812A	Low Power EMI Reduction IC P2811A/B and P2812A/B and P2814A/B Low Power EMI Reduction IC Features • FCC approved method of EMI attenuation • Provides up to 15dB EMI reduction • Generates a 1x, 2x and 4x low EMI spread spectrum clock of the input frequency o 1x: P2811A/B o 2x: P2812A/B o 4x: P2814A/B • Optimized for i	ON Semiconductor

P28 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
P2803NVG	N- & P-Channel Enhancement Mode Field Effect Transistor NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2803NVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS N-Channel P-Channel 30 -30 RDS(ON) 27.5m 34m ID 7A -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TES	NIKO-SEM
P2804ND5G	N- & P-Channel Enhancement Mode Field Effect Transistor NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary P2804ND5G TO-252-5 Lead-Free PRODUCT SUMMARY S2 G2 S1 G1 V(BR)DSS N-Channel P-Channel 40 -40 RDS(ON) 28m 55m ID 7A -5.5A G1 D1/D2 D1 G2 D2 S1 S2 G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMU	NIKO-SEM
P2804BDG	N-Channel Logic Level Enhancement NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P2804BDG TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS 40V RDS(ON) 28m ID 10A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS	NIKO-SEM

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Número de pieza	Descripción	Fabricantes	PDF
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