Datasheet P2003EEAA Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	P2003EEAA	P-Channel Enhancement Mode MOSFET P2003EEAA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 20mΩ @VGS = -10V ID -25A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage Gate-Source Voltage VDS -30 VGS	UNIKC

P2003E Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
P2003EVG	P-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor D P2003EVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS -30 RDS(ON) 20m ID -9A G S 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PAR	Niko
P2003ED	P-Channel Enhancement Mode MOSFET P2003ED P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 20mΩ @VGS = -10V ID -36A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage	UNIKC
P2003EEA	P-Channel Enhancement Mode MOSFET P2003EEA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 20mΩ @VGS = -10V ID -28A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage Gate-Source Vol	UNIKC

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Número de pieza	Descripción	Fabricantes	PDF
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