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Datasheet P135 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | P135 | PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Bulletin I27125
rev. A 04/99
P100 SERIES
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS
Features
Glass passivated junctions for greater reliability Electrically isolated base plate Available up to 1200 V RRM, V DRM High dynamic characteristics Wide choice of circuit configurations Simplified mechanical de |
 International Rectifier |
 |
| 5 | P1350AT | N-Channel Enhancement Mode MOSFET P1350AT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
500V
0.52Ω @VGS = 10V
ID 13A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 500
Gate-Source Voltage
VGS ±30
Continuous |
 UNIKC |
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| 4 | P1350ATF | N-Channel Enhancement Mode MOSFET P1350ATF / P1350ATFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
500V
0.52Ω @VGS = 10V
ID 13A
TO-220F TO-220FS
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 500
Ga |
UNIKC |
|
| 3 | P1350ATFS | N-Channel Enhancement Mode MOSFET P1350ATF / P1350ATFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
500V
0.52Ω @VGS = 10V
ID 13A
TO-220F TO-220FS
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 500
Ga |
UNIKC |
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