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Datasheet P12N60 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 P12N60   HGTP12N60

HGTP12N60D1 April 1995 12A, 600V N-Channel IGBT Package JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features • 12A, 600V • Latch Free Operation • Typical Fall Time <500ns • High Input Impedance • Low Conduction Loss Description The IGBT is a MOS gated hi
 ETC
ETC		 datasheet P12N60 pdf

P12 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
P1203BV

N-Channel Enhancement Mode MOSFET

P1203BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 12mΩ @VGS = 10V ID 11A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Dra
 UNIKC
UNIKC		 datasheet pdf - UNIKC
P12NM50

STP12NM50

www.DataSheet4U.net STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1 N-channel 550V @ tjmax - 0.30Ω - 12A TO-220/FP/D2/I2PAK MDmesh™ Power MOSFET General features Type STB12NM50 STB12NM50-1 STP12NM50 STP12NM50FP ■ ■ ■ ■ ■ VDSS (@Tjmax) 550V 550V 550V 550V RDS(on)
STMicroelectronics
STMicroelectronics		 datasheet pdf - STMicroelectronics
P1260ATF

N-Channel Enhancement Mode MOSFET

P1260ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 0.65Ω @VGS = 10V ID 12A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage
UNIKC
UNIKC		 datasheet pdf - UNIKC


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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