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Datasheet P124 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
5 | P124 | PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
P124
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and ou |
Polyfet RF Devices |
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4 | P124 | PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Bulletin I27125
rev. A 04/99
P100 SERIES
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS
Features
Glass passivated junctions for greater reliability Electrically isolated base plate Available up to 1200 V RRM, V DRM High dynamic characteristics Wide choice of circuit configurations Simplified mechanical de |
International Rectifier |
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3 | P1241-04 | CdS photoconductive cell VISIBLE DETECTOR
CdS photoconductive cell
Resin coating type (5R type)
Standard type designed for general-purpose, wide application
CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These sensors are non-polar res |
Hamamatsu Corporation |
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2 | P1241-05 | CdS photoconductive cell VISIBLE DETECTOR
CdS photoconductive cell
Resin coating type (5R type)
Standard type designed for general-purpose, wide application
CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These sensors are non-polar res |
Hamamatsu Corporation |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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