Datasheet P1003EVG Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	P1003EVG	P-Channel Enhancement Mode MOSFET P1003EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS -30V RDS(ON) 10.5mΩ @VGS = -10V ID -13A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Aval	UNIKC

P1003 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
P1003EVG	P-Channel Enhancement Mode MOSFET P1003EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS -30V RDS(ON) 10.5mΩ @VGS = -10V ID -13A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulse	UNIKC
P1003BDF	N-Channel Enhancement Mode MOSFET P1003BDF N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9.8mΩ @VGS = 10V ID 62A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous	UNIKC
P1003EK	P-Channel Enhancement Mode MOSFET P1003EK P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 10.5mΩ @VGS = -10V ID -30A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage VDS Gate-Source Volt	UNIKC

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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