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Datasheet P0660ETF Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | P0660ETF | N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM
N-Channel Enhancement Mode Field Effect Transistor
P0660ETF:TO-220F P0660ETFS:TO-220FS
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
1.3Ω
ID 6A
D G
S
ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Vol |
 NIKO-SEM |
 |
| 3 | P0660ETF | N-Channel Enhancement Mode MOSFET P0660ETF / P0660ETFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
1.3Ω @VGS = 10V
ID 6A
TO-220F TO-220FS
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
|
 UNIKC |
|
| 2 | P0660ETFS | N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM
N-Channel Enhancement Mode Field Effect Transistor
P0660ETF:TO-220F P0660ETFS:TO-220FS
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
1.3Ω
ID 6A
D G
S
ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Vol |
NIKO-SEM |
|
| 1 | P0660ETFS | N-Channel Enhancement Mode MOSFET P0660ETF / P0660ETFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
1.3Ω @VGS = 10V
ID 6A
TO-220F TO-220FS
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
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UNIKC |
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