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Datasheet P0460ETF Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | P0460ETF | N-Channel Enhancement Mode MOSFET P0460ETF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
2.3Ω @VGS = 10V
ID 4A
TO-220F
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS |
 UNIKC |
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| 2 | P0460ETFA | N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM
N-Channel Enhancement Mode P0460ETFA:TO-220F
Field Effect Transistor
P0460ETFAS:TO-220FS
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
2.5Ω
ID 4A
D G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Sou |
 NIKO-SEM |
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| 1 | P0460ETFAS | N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM
N-Channel Enhancement Mode P0460ETFA:TO-220F
Field Effect Transistor
P0460ETFAS:TO-220FS
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
2.5Ω
ID 4A
D G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Sou |
NIKO-SEM |
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