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Datasheet P0260ETFS Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 P0260ETFS   N-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM N-Channel Enhancement Mode P0260ETF:TO-220F Field Effect Transistor P0260ETFS:TO-220FS Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 4.3Ω ID 2A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Sourc
 NIKO-SEM
NIKO-SEM		 datasheet P0260ETFS pdf

P0260E Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
P0260ETF

N-Channel Enhancement Mode MOSFET

P0260ETF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 4.3Ω @VGS = 10V ID 2A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage V
 UNIKC
UNIKC		 datasheet pdf - UNIKC
P0260ETF

N-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM N-Channel Enhancement Mode P0260ETF:TO-220F Field Effect Transistor P0260ETFS:TO-220FS Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 4.3Ω ID 2A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
NIKO-SEM
NIKO-SEM		 datasheet pdf - NIKO-SEM
P0260EIS

N-Channel Enhancement Mode MOSFET

P0260EIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 4.4Ω @VGS = 10V ID 2A TO-251(IS) 1.GATE 2.DRAIN 3.SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS
 UNIKC
UNIKC		 datasheet pdf - UNIKC


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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