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Datasheet NTE266 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | NTE266 | Silicon NPN Transistor Darlington Power Amplifier NTE266 Silicon NPN Transistor Darlington Power Amplifier
Features: D Forward Current Transfer Ratio: hFE = 40,000 Min D Power Dissipation: 1.33W Free–Air @ TA = +50°C D Hard Solder Mountdown Applications: D Driver, IC Driver D Regulator D Touch Switch D Audio Output D Relay Substitute D Oscillato |
 NTE |
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| 6 | NTE2661 | Silicon NPN Transistor Horizontal Deflection Output NTE2661 Silicon NPN Transistor Horizontal Deflection Output for HDTV
Features: D High Speed: tf = 0.15µs Typ D High Breakdown Voltage: VCBO = 1700V D Low Saturation Voltage: VCE(sat) = 3V Max Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−to−Base Voltage, VCBO . . |
 NTE Electronics |
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| 5 | NTE2662 | Silicon NPN Transistor High Frequency
NTE2662 Silicon NPN Transistor High Frequency, Low Noise RF
Description: The NTE2662 is a silicon NPN type transistor in a miniature surface mount package designed for oscillator applications up to 3GHz. This device features low voltage operation, low phase noise, and high immun |
NTE Electronics |
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| 4 | NTE2665 | Silicon NPN Transistor Horizontal Deflection Output
NTE2665 Silicon NPN Transistor Horizontal Deflection Output for High Resolution Display, Color TV
Features: D High Voltage: VCBO = 1700V D Low Saturation Voltage: VCE(sat) = 3V Max D High Speed: tf = 0.1μs Typ Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) C |
NTE Electronics |
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