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Datasheet NTE253 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 11 | NTE253 | Silicon Complementary Transistors Darlington Power Amplifier NTE253 (NPN) & NTE254 (PNP) Silicon Complementary Transistors Darlington Power Amplifier
Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications. Features: D H |
 NTE |
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| 10 | NTE2530 | Silicon Complementary Transistors High Voltage Driver NTE2530 (NPN) & NTE2531 (PNP) Silicon Complementary Transistors High Voltage Driver
Features: D High Current Capacity: IC = 2A D High Breakdown Voltage: VCEO = 400V Min Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . |
NTE |
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| 9 | NTE2531 | Silicon Complementary Transistors NTE2530 (NPN) & NTE2531 (PNP) Silicon Complementary Transistors
High Voltage Driver
Features: D High Current Capacity: IC = 2A D High Breakdown Voltage: VCEO = 400V Min
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . |
NTE |
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| 8 | NTE2532 | Integrated Circuit NMOS / 32K EPROM / 300ns NTE2532 Integrated Circuit NMOS, 32K EPROM, 300ns
Description: The NTE2532 is a 32,768–bit, ultraviolet–light–erasable, electrically–programmable read–only memory in a 24–Lead DIP type package. This device is fabricated using N–channel silicon–gate technology for high speed and simpl |
NTE |
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